Substantial local variation of the Seebeck coefficient in gold nanowires

Field-effect modulation of Seebeck coefficient in single PbSe nanowires.

In this Letter, we present a novel strategy to control the thermoelectric properties of individual PbSe nanowires. Using a field-effect gated device, we were able to tune the Seebeck coefficient of single PbSe nanowires from 64 to 193 microV x K(-1). This direct electrical field control of sigma and S suggests a powerful strategy for optimizing ZT in thermoelectric devices. These results repres...

The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process

Silicon nanowires are patterned down to 30 nm using complementary metal-oxide-semiconductor (CMOS) compatible process. The electrical conductivities of n-/p-leg nanowires are extracted with the variation of width. Using this structure, Seebeck coefficients are measured. The obtained maximum Seebeck coefficient values are 122 μV/K for p-leg and -94 μV/K for n-leg. The maximum attainable power fa...

Seebeck coefficient of one electron

On the Interplay Between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires

Computational Seebeck Coefficient Measurement Simulations

We have employed finite element analysis to develop computational Seebeck coefficient metrology simulations. This approach enables a unique exploration of multiple probe arrangements and measurement techniques within the same temporal domain. To demonstrate the usefulness of this approach, we have performed these Seebeck coefficient measurement simulations to quantitatively explore perturbation...